US 11,837,559 B2
Group III nitride-based radio frequency amplifiers having back side source, gate and/or drain terminals
Michael E. Watts, Scottsdale, AZ (US); Mario Bokatius, Chandler, AZ (US); Jangheon Kim, Chandler, AZ (US); Basim Noori, San Jose, CA (US); Qianli Mu, San Jose, CA (US); Kwangmo Chris Lim, San Jose, CA (US); and Marvin Marbell, Morgan Hill, CA (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Cree, Inc., Durham, NC (US)
Filed on Mar. 24, 2021, as Appl. No. 17/211,281.
Claims priority of provisional application 63/004,962, filed on Apr. 3, 2020.
Prior Publication US 2021/0313286 A1, Oct. 7, 2021
Int. Cl. H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 24/49 (2013.01); H01L 29/2003 (2013.01); H01L 29/41775 (2013.01); H01L 29/7786 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6683 (2013.01); H01L 2224/49107 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/30111 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A radio frequency (“RF”) amplifier, comprising:
a Group III nitride-based RF amplifier die that includes a semiconductor layer structure and a gate terminal, a source terminal and a drain terminal on the semiconductor layer structure,
wherein a plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and at least two of the gate terminal, the drain terminal and the source terminal are provided on a lower surface of the semiconductor layer structure,
wherein at least one of the gate terminal and the drain terminal is electrically connected to the unit cell transistors through a conductive via, and
wherein an inductance of the conductive via comprises at least a portion of a matching circuit.