US 11,837,528 B2
Method of manufacturing a semiconductor device having a bond wire or clip bonded to a bonding pad
Anton Mauder, Kolbermoor (DE); and Hans-Joachim Schulze, Taufkirchen (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Feb. 4, 2021, as Appl. No. 17/167,242.
Application 17/167,242 is a division of application No. 16/296,392, filed on Mar. 8, 2019, granted, now 10,971,435.
Claims priority of application No. 102018105462.9 (DE), filed on Mar. 9, 2018.
Prior Publication US 2021/0183746 A1, Jun. 17, 2021
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01)
CPC H01L 23/49513 (2013.01) [H01L 21/4825 (2013.01); H01L 23/3121 (2013.01); H01L 23/49562 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/48 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/7396 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 2224/022 (2013.01); H01L 2224/0219 (2013.01); H01L 2224/02185 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/04034 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48111 (2013.01); H01L 2224/48237 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/84815 (2013.01); H01L 2224/8592 (2013.01); H01L 2224/85815 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a base portion of a bonding pad on a semiconductor portion, the base portion further comprising a base layer;
forming a main surface of the bonding pad, the main surface comprising a bonding region;
bonding a bond wire or clip to the bonding region; and
forming a supplemental structure directly on the base portion, wherein the supplemental structure laterally adjoins the bond wire or clip or is laterally spaced apart from the bond wire or clip, and wherein a volume-related specific heat capacity of the supplemental structure is higher than a volume-related specific heat capacity of the base layer.