US 11,837,516 B2
Semiconductor device
Takanobu Kajihara, Tokyo (JP); Katsuhiko Omae, Tokyo (JP); Takashi Nagao, Tokyo (JP); Atsuki Fujita, Tokyo (JP); Ryosuke Takeshita, Tokyo (JP); and Masakazu Hamada, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/256,841
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Sep. 6, 2018, PCT No. PCT/JP2018/032965
§ 371(c)(1), (2) Date Dec. 29, 2020,
PCT Pub. No. WO2020/149672, PCT Pub. Date Mar. 12, 2020.
Prior Publication US 2021/0305111 A1, Sep. 30, 2021
Int. Cl. H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/495 (2006.01)
CPC H01L 23/31 (2013.01) [H01L 23/3677 (2013.01); H01L 23/49568 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a mounting portion of a lead frame on which a semiconductor element is mounted and which is made of metal;
a heat dissipation portion opposite to the mounting portion; and
a resin sealing the mounting portion on which the semiconductor element is mounted and the heat dissipation portion, wherein
the lead frame has a scale-like portion on which scale-shaped projections are consecutively formed, and
the scale-like portion is provided over both sides across a resin boundary portion which is a boundary between inside and outside of an area sealed by the resin on the lead frame, wherein the scale-like portion is configured to provide a discharge path for a gas from the inside of the area to the outside of the area at a time of a molding of the resin to the lead frame.