CPC H01L 29/735 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/42304 (2013.01); H01L 29/456 (2013.01)] | 20 Claims |
1. A structure comprising:
an extrinsic base region comprising semiconductor material;
an emitter region on a first side of the extrinsic base region;
a collector region on a second side of the extrinsic base region; and
an extrinsic base contact wrapping around the semiconductor material of the extrinsic base region; and
a sidewall spacer surrounding the extrinsic base region, wherein the sidewall spacer comprises an upper recessed portion.
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