US 11,837,460 B2
Lateral bipolar transistor
Jagar Singh, Clifton Park, NY (US); Alexander M. Derrickson, Saratoga Springs, NY (US); and Alexander Martin, Greenfield Center, NY (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Dec. 14, 2021, as Appl. No. 17/550,835.
Claims priority of provisional application 63/240,466, filed on Sep. 3, 2021.
Prior Publication US 2023/0075949 A1, Mar. 9, 2023
Int. Cl. H01L 29/735 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/735 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/42304 (2013.01); H01L 29/456 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
an extrinsic base region comprising semiconductor material;
an emitter region on a first side of the extrinsic base region;
a collector region on a second side of the extrinsic base region; and
an extrinsic base contact wrapping around the semiconductor material of the extrinsic base region; and
a sidewall spacer surrounding the extrinsic base region, wherein the sidewall spacer comprises an upper recessed portion.