CPC H01L 23/5389 (2013.01) [H01L 23/49811 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H01L 29/41741 (2013.01); H01L 29/4238 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/10346 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/19105 (2013.01)] | 24 Claims |
1. A radio frequency (“RF”) transistor amplifier, comprising:
an RF transistor amplifier die;
an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a first surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement;
one or more circuit elements on the first and/or second side of the interconnect structure;
an encapsulating material on the RF transistor amplifier die and the interconnect structure; and
an auxiliary spacer on the one or more circuit elements.
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