US 11,837,457 B2
Packaging for RF transistor amplifiers
Basim Noori, San Jose, CA (US); Marvin Marbell, Morgan Hill, CA (US); Scott Sheppard, Chapel Hill, NC (US); Kwangmo Chris Lim, San Jose, CA (US); Alexander Komposch, Morgan Hill, CA (US); and Qianli Mu, San Jose, CA (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Cree, Inc., Durham, NC (US)
Filed on Sep. 11, 2020, as Appl. No. 17/018,721.
Prior Publication US 2022/0084950 A1, Mar. 17, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 25/00 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 23/49811 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H01L 29/41741 (2013.01); H01L 29/4238 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/10346 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/19105 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A radio frequency (“RF”) transistor amplifier, comprising:
an RF transistor amplifier die;
an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a first surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement;
one or more circuit elements on the first and/or second side of the interconnect structure;
an encapsulating material on the RF transistor amplifier die and the interconnect structure; and
an auxiliary spacer on the one or more circuit elements.