US 11,837,440 B2
Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
Takeshi Yasui, Toyama (JP); Katsunori Funaki, Toyama (JP); Masaki Murobayashi, Toyama (JP); and Koichiro Harada, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Mar. 17, 2020, as Appl. No. 16/821,511.
Application 16/821,511 is a continuation of application No. PCT/JP2018/035217, filed on Sep. 21, 2018.
Claims priority of application No. 2017-204398 (JP), filed on Oct. 23, 2017.
Prior Publication US 2020/0219699 A1, Jul. 9, 2020
Int. Cl. H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01)
CPC H01J 37/3211 (2013.01) [H01J 37/3244 (2013.01); H01L 21/02247 (2013.01); H01L 21/308 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/334 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A substrate processing apparatus, comprising:
a plasma vessel in which a process gas is plasma-excited;
a substrate process chamber which is in fluid communication with the plasma vessel;
a gas supply system configured to supply the process gas into the plasma vessel; and
a coil installed to wind plural times in a spiral form around an outer periphery of the plasma vessel and configured to be supplied with high-frequency power,
wherein the coil is installed such that:
distances from an inner periphery of the coil to an inner periphery of the plasma vessel at plural positions of the coil between one end and the other end of the coil are different from each other;
a distance d2 among the distances, at which an amplitude of a standing wave of a voltage applied to the coil is maximized, is maximized among a section from the one end to the other end of the coil; and
distances d1 among the distances, at a first section that is wound once around the outer periphery of the plasma vessel from the one end of the coil, at a second section that is wound once around the outer periphery of the plasma vessel from the other end of the coil, and at a center section that is wound once around the outer periphery of the plasma vessel at a midpoint of the coil as a center of the center section are configured to be shorter than d2.