US 11,837,430 B2
Energy filter element for ion implantation systems for the use in the production of wafers
Florian Krippendorf, Jena (DE); and Constantin Csato, Stammbach (DE)
Assigned to MI2-FACTORY GMBH, Jena (DE)
Filed by mi2-factory GmbH, Jena (DE)
Filed on Oct. 1, 2021, as Appl. No. 17/491,963.
Application 17/491,963 is a continuation of application No. 17/036,966, filed on Sep. 29, 2020, granted, now 11,183,358.
Application 17/036,966 is a continuation of application No. 16/090,521, granted, now 10,847,338, previously published as PCT/EP2017/058018, filed on Apr. 4, 2017.
Claims priority of application No. 10 2016 106 119.0 (DE), filed on Apr. 4, 2016.
Prior Publication US 2022/0020556 A1, Jan. 20, 2022
Int. Cl. H01J 37/05 (2006.01); H01J 37/317 (2006.01); H01J 37/147 (2006.01)
CPC H01J 37/05 (2013.01) [H01J 37/1472 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01J 37/3172 (2013.01); H01J 2237/002 (2013.01); H01J 2237/047 (2013.01); H01J 2237/057 (2013.01); H01J 2237/3171 (2013.01); H01J 2237/31705 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A method of doping a wafer, comprising:
implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device, the implantation device comprising a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and
wherein the filter has an even base surface on one side and protruding microstructures on an opposite side, and wherein the filter is arranged such that the protruding microstructures of the filter face away from the wafer and towards the ion beam, and
wherein the filter is tilted in such a way with respect to the wafer during the implanting that the even base surface of the filter is arranged at an angle greater than zero with respect to a surface of the wafer which faces towards the ion beam.