US 11,837,286 B2
Electrical distance-based wave shaping for a memory device
John Christopher Sancon, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 13, 2022, as Appl. No. 18/046,393.
Application 18/046,393 is a continuation of application No. 17/328,809, filed on May 24, 2021, granted, now 11,488,663.
Application 17/328,809 is a continuation in part of application No. 16/903,921, filed on Jun. 17, 2020, granted, now 11,170,851, issued on Nov. 9, 2021.
Prior Publication US 2023/0111770 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01)
CPC G11C 13/003 (2013.01) [G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0004 (2013.01); G11C 13/0011 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a plurality of wordlines;
a plurality of bitlines, wherein the plurality of wordlines and the plurality of bitlines form a grid;
a plurality of memory cells located at intersections of the plurality of bitlines and the plurality of wordlines in the grid;
a plurality of bitline drivers;
a plurality of wordline drivers; and
compensation circuitry configured to:
determine a bitline distance of a first bitline driver of the plurality of bitline drivers from a first memory cell of the plurality of memory cells, a wordline distance of a first wordline driver of the plurality of wordline drivers from the first memory cell, or both the wordline distance and the bitline distance; and
output values to control one or more voltages applied to the first memory cell based at least in part on the bitline distance, the wordline distance, or both.