US 11,837,283 B2
High voltage switch with mitigated gate stress
Michael Andrew Smith, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 26, 2022, as Appl. No. 17/896,854.
Application 17/896,854 is a continuation of application No. 17/244,501, filed on Apr. 29, 2021, granted, now 11,443,798.
Prior Publication US 2022/0415390 A1, Dec. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/06 (2006.01); G11C 11/56 (2006.01); H03K 17/10 (2006.01); G11C 5/14 (2006.01); G11C 16/08 (2006.01)
CPC G11C 11/5635 (2013.01) [G11C 5/145 (2013.01); G11C 11/5642 (2013.01); G11C 16/06 (2013.01); G11C 16/08 (2013.01); H03K 17/102 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a switch circuit structured as a high-voltage switch circuit in the electronic device, the switch circuit comprising:
a transistor having a first gate separated from a channel structure by a dielectric region, the transistor coupled to receive a voltage from a node of the switch circuit, the voltage being a high voltage for the electronic device;
an output node coupled to the transistor, with the output node coupled to transfer the voltage from the transistor externally from the switch circuit;
a diode structure coupled to the output node and to the first gate, the diode structure being a feedback structure arranged to provide feedback to the transistor from the output node; and
control circuitry structured to control timing of an input signal to the transistor such that voltage across the dielectric region is operatively prevented from entering a Fowler-Nordheim regime.