US 11,837,267 B2
Implementations to store fuse data in memory devices
Mattia Boniardi, Cormano (IT); Anna Maria Conti, Milan (IN); Mattia Robustelli, Milan (IT); Innocenzo Tortorelli, Cernusco Sul Naviglio (IT); and Mario Allegra, Monza (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 20, 2021, as Appl. No. 17/325,997.
Application 17/325,997 is a division of application No. 16/514,431, filed on Jul. 17, 2019, granted, now 11,037,613.
Prior Publication US 2021/0272615 A1, Sep. 2, 2021
Int. Cl. G11C 7/22 (2006.01); G11C 11/16 (2006.01)
CPC G11C 11/1673 (2013.01) [G11C 11/1659 (2013.01); G11C 11/1675 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a first array of memory cells of a first type and configured to store user data;
a second array of memory cells of a second type, the second array comprising a chalcogenide element and configured to store fuse data associated with operating the first array of memory cells, wherein the second array of memory cells are operable to be reprogrammed after storing the fuse data;
sense circuitry coupled with the second array of memory cells and configured to identify values of the fuse data stored in the second array; and
a controller coupled with the first array, the second array, and the sense circuitry and configured to access memory cells of the first array based at least in part on the sense circuitry identifying the values of the fuse data stored in the second array.