US 11,837,166 B2
Method of compensating brightness of display and display
Hiromitsu Katsui, Yokkaichi (JP); Bo Liu, Gainesville, FL (US); and Maxime Lemaitre, Gainesville, FL (US)
Assigned to JSR CORPORATION, Tokyo (JP); and MATTRIX TECHNOLOGIES, INC., Gainesville, FL (US)
Appl. No. 17/606,660
Filed by JSR CORPORATION, Tokyo (JP); and Mattrix Technologies, Inc, Gainesville, FL (US)
PCT Filed Apr. 23, 2020, PCT No. PCT/JP2020/017499
§ 371(c)(1), (2) Date Oct. 26, 2021,
PCT Pub. No. WO2020/218421, PCT Pub. Date Oct. 29, 2020.
Claims priority of provisional application 63/004,046, filed on Apr. 2, 2020.
Claims priority of application No. 2019-086406 (JP), filed on Apr. 26, 2019.
Prior Publication US 2022/0215801 A1, Jul. 7, 2022
Int. Cl. G09G 3/3233 (2016.01); G09G 3/3258 (2016.01); G09G 3/3291 (2016.01); H10K 50/30 (2023.01); G09G 3/3283 (2016.01)
CPC G09G 3/3233 (2013.01) [G09G 3/3258 (2013.01); G09G 3/3283 (2013.01); G09G 3/3291 (2013.01); G09G 2310/0262 (2013.01); G09G 2320/0214 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/0257 (2013.01); G09G 2320/0295 (2013.01); G09G 2320/045 (2013.01); G09G 2320/0626 (2013.01); G09G 2330/026 (2013.01); H10K 50/30 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method of compensating brightness of a display comprising a plurality of vertical organic light emitting transistors and a memory element that stores characteristic information about vertical organic light emitting transistor performance characteristics, the method comprising:
a step (A) of applying a voltage for brightness inspection to a gate electrode of a vertical organic light emitting transistor to be corrected;
a step (B) of measuring a current flowing through a current supply line through which the current is supplied to a source electrode of the vertical organic light emitting transistor by the application of the voltage for brightness inspection to the gate electrode of the vertical organic light emitting transistor to be corrected; and
a step (C) of determining a corrected value of the voltage to be applied to the gate electrode of the vertical organic light emitting transistor based on a value of the current measured in the step (B) and the characteristic information of the vertical organic light emitting transistor stored in the memory element,
wherein the step (A) comprises a step (A1) of cutting off supply of a current to vertical organic light emitting transistors not to be corrected.