US 11,836,345 B2
Memory element profiling and operational adjustments
Francis Chew, Boulder, CO (US); and Bruce A. Liikanen, Berthoud, CO (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 15, 2021, as Appl. No. 17/151,070.
Application 17/151,070 is a continuation of application No. 16/182,399, filed on Nov. 6, 2018, granted, now 10,895,983.
Prior Publication US 2021/0141533 A1, May 13, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0604 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
determining that a first memory page of a memory device has satisfied a trigger condition;
generating, during runtime of the memory device, profiles for the first memory page and for one or more second memory pages that did not satisfy the trigger condition; and
storing the generated profiles,
wherein the one or more second memory pages comprise:
at least one second memory page in a same word line as the first memory page; and
at least one second memory page that is in a word line of the memory block immediately above or immediately below the same word line.