US 11,835,601 B2
Magnetoresistive magnetic field sensor bridge with compensated cross-axis effect
Brad Engel, Chandler, AZ (US); and Phillip Mather, Phoenix, AZ (US)
Assigned to Robert Bosch GmbH, Stuttgart (DE)
Appl. No. 16/956,167
Filed by Robert Bosch GmbH, Stuttgart (DE)
PCT Filed Dec. 11, 2018, PCT No. PCT/EP2018/084398
§ 371(c)(1), (2) Date Jun. 19, 2020,
PCT Pub. No. WO2019/121174, PCT Pub. Date Jun. 27, 2019.
Claims priority of provisional application 62/608,658, filed on Dec. 21, 2017.
Prior Publication US 2020/0333408 A1, Oct. 22, 2020
Int. Cl. G01R 33/09 (2006.01); G01R 33/00 (2006.01)
CPC G01R 33/093 (2013.01) [G01R 33/0052 (2013.01); G01R 33/096 (2013.01); G01R 33/098 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A magnetoresistive (MR) magnetic field sensor system, comprising:
at least one MR magnetic field sensor bridge, the at least one MF magnetic field sensor bridge including:
a sense leg including at least one sense element with a first layer with a first fixed magnetization orientation and a second layer with a first free magnetization orientation, the first free magnetization orientation orthogonal to the first fixed magnetization orientation at a zero applied magnetic field, and
a reference leg electronically connected in parallel to the sense leg, the reference leg including at least one reference element with a third layer with a second fixed magnetization orientation parallel to, and in the same direction as, the first fixed magnetization orientation, and a fourth layer with a second free magnetization orientation, the second free magnetization orientation parallel to the first fixed magnetization orientation at the zero applied magnetic field, wherein:
the at least one sense element includes a first sense element and a second sense element;
the first free magnetization orientation of the first sense element is opposite to the first free magnetization orientation of the second sense element at the zero applied magnetic field;
the at least one reference element includes a first reference element and a second reference element; and
the second free magnetization orientation of the first reference element is opposite to the second free magnetization orientation of the second reference element at the zero applied magnetic field.