US 11,834,754 B2
ALD method with multi-chambers for sic or multi-elements epitaxial growth
Zhaosheng Meng, Qingdao (CN); Zhuangzhuang Wu, Qingdao (CN); and Min-Hwa Chi, Qingdao (CN)
Assigned to SiEn (QingDao) Integrated Circuits Co., Ltd., Qingdao (CN)
Filed by SiEn (QingDao) Integrated Circuits Co., Ltd., Shandong (CN)
Filed on Jan. 28, 2022, as Appl. No. 17/588,207.
Claims priority of application No. 202110135454.X (CN), filed on Feb. 1, 2021.
Prior Publication US 2022/0243359 A1, Aug. 4, 2022
Int. Cl. C30B 25/14 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C30B 29/36 (2006.01); C30B 25/10 (2006.01); C30B 25/12 (2006.01); C30B 33/02 (2006.01); C23C 16/32 (2006.01)
CPC C30B 25/14 (2013.01) [C23C 16/325 (2013.01); C23C 16/45544 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 29/36 (2013.01); C30B 33/02 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An ALD (Atomic layer deposition) apparatus, comprising:
a reacting chamber, in which a plurality of heaters controlled independently are positioned, the heaters being positioned at a bottom of the reacting chamber, and the heaters being used to bear and heat a substrate to be deposited a film;
a transmitting device, positioned between the heaters to be used to transmit the substrate between the heaters; and
a gas introducing device, connecting to the reacting chamber to be used to provide reacting gas to the reacting chamber, comprising:
a horizontal intake, positioned at a top of the reacting chamber and in a middle positioned of the top of the reacting chamber, the horizontal intake comprising a plurality of intake pipes, an air outlet of the intake pipes being positioned in the reacting chamber, and the air outlet being perpendicular to an axis of the reacting chamber; and
a vertical intake, positioned at the top of the reacting chamber, the vertical intake comprising a plurality of air inlets positioned at the top of the reacting chamber, the air inlets being parallel to the axis of the reacting chamber.