CPC C30B 25/14 (2013.01) [C23C 16/325 (2013.01); C23C 16/45544 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 29/36 (2013.01); C30B 33/02 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01)] | 17 Claims |
1. An ALD (Atomic layer deposition) apparatus, comprising:
a reacting chamber, in which a plurality of heaters controlled independently are positioned, the heaters being positioned at a bottom of the reacting chamber, and the heaters being used to bear and heat a substrate to be deposited a film;
a transmitting device, positioned between the heaters to be used to transmit the substrate between the heaters; and
a gas introducing device, connecting to the reacting chamber to be used to provide reacting gas to the reacting chamber, comprising:
a horizontal intake, positioned at a top of the reacting chamber and in a middle positioned of the top of the reacting chamber, the horizontal intake comprising a plurality of intake pipes, an air outlet of the intake pipes being positioned in the reacting chamber, and the air outlet being perpendicular to an axis of the reacting chamber; and
a vertical intake, positioned at the top of the reacting chamber, the vertical intake comprising a plurality of air inlets positioned at the top of the reacting chamber, the air inlets being parallel to the axis of the reacting chamber.
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