US 11,834,596 B2
Quantum dot and method for producing the same
Soichiro Nikata, Fukuoka (JP); Yoko Michiwaki, Fukuoka (JP); Tomoaki Hieda, Fukuoka (JP); Yuko Ogura, Fukuoka (JP); Akio Mishima, Fukuoka (JP); and Vit Kalousek, Fukuoka (JP)
Assigned to NS MATERIALS INC., Fukuoka (JP)
Appl. No. 17/257,074
Filed by NS Materials Inc., Fukuoka (JP)
PCT Filed Jul. 31, 2020, PCT No. PCT/JP2020/029529
§ 371(c)(1), (2) Date Dec. 30, 2020,
PCT Pub. No. WO2021/039290, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 2019-153204 (JP), filed on Aug. 23, 2019.
Prior Publication US 2021/0363422 A1, Nov. 25, 2021
Int. Cl. C09K 11/88 (2006.01); C01G 15/00 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01)
CPC C09K 11/883 (2013.01) [C01G 15/006 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01); C01P 2006/60 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A quantum dot comprising ZnAgInxGa1-xSySe1-y (0≤x<1 and 0≤y≤1),
wherein the quantum dot exhibits fluorescence properties including a fluorescence full width at half maximum of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in a green wavelength range to a red wavelength range, and
wherein a ratio of Ag to Ga is in a range of Ag/Ga=0.05 to 10, and a ratio of Zn to Ga is in a range of Zn/Ga=0.1 to 10.