CPC H04B 1/40 (2013.01) [H01L 23/49827 (2013.01); H01L 23/66 (2013.01); H01L 24/92 (2013.01); H01L 25/0655 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/131 (2013.01); H01L 2224/133 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/1329 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/92222 (2013.01); H01L 2924/15311 (2013.01)] | 20 Claims |
1. A method of manufacturing a radio-frequency device, comprising:
providing a semiconductor die including a radio-frequency circuit, a first side and a second side, and a plurality of vias, each via configured to provide an electrical connection between the first side and the second side of the semiconductor die; and
mounting a filter device on the first side of the semiconductor die, the filter device in communication with the radio-frequency circuit, the radio-frequency circuit implemented in a layer on the first side of the semiconductor die and at least some of the vias coupled with the radio-frequency circuit to support an electrical connection between the radio-frequency circuit and mounting features on the second side of the semiconductor die.
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