CPC H01L 31/18 (2013.01) [H01L 31/046 (2014.12); H01L 31/076 (2013.01)] | 8 Claims |
1. A method for manufacturing a stacked thin film, comprising:
forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an atmosphere at an oxygen partial pressure in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, wherein
the oxygen partial pressure of the sputtering is in the above range, and 0.5×d [Pa] or more and 1.5×d [Pa] or less when a deposition rate is d [μm/min], in formation of the photoelectric conversion layer, and
a sputtering temperature is 300° C. or more and 600° C. or less, in formation of the photoelectric conversion layer.
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