US 11,817,511 B2
Positive electrode of crystalline silicon solar cell having gate rupture prevention function
Kang-Cheng Lin, Zhejiang (CN); Mingzhang Feng, Zhejiang (CN); Jiebin Fang, Zhejiang (CN); and Gang Chen, Zhejiang (CN)
Assigned to Zhejiang Aiko Solar Energy Technology Co., Ltd., Zhejiang (CN); and Guangdong Aiko Solar Energy Technology Co., Ltd., Guangdong (CN)
Appl. No. 17/262,690
Filed by Zhejiang Aiko Solar Energy Technology Co., Ltd., Zhejiang (CN); and Guangdong Aiko Solar Energy Technology Co., Ltd., Guangdong (CN)
PCT Filed Jul. 23, 2019, PCT No. PCT/CN2019/097297
§ 371(c)(1), (2) Date Mar. 23, 2021,
PCT Pub. No. WO2020/020158, PCT Pub. Date Jan. 30, 2020.
Claims priority of application No. 201810816451.0 (CN), filed on Jul. 24, 2018.
Prior Publication US 2021/0399151 A1, Dec. 23, 2021
Int. Cl. H01L 31/0224 (2006.01); H01L 31/068 (2012.01)
CPC H01L 31/022433 (2013.01) [H01L 31/068 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A crystalline silicon solar cell, comprising a positive electrode, the positive electrode including a positive electrode busbar, a positive electrode grid, and a break-proof grid structure that prevents the positive electrode grid from breaking upon printing, the positive electrode grid and the break-proof grid structure being integrally printed and formed, wherein a portion of the break-proof grid structure between the positive electrode busbar and positive electrode grid includes at least one hollow-out groove,
wherein the break-proof grid structure is an octagon, the octagon includes a rectangular grid segment located in the middle and two isosceles trapezoidal grid segments that are located at both sides of the rectangular grid segment and are provided symmetrically with the rectangular grid segment as a center, the rectangular grid segment spans the positive electrode busbar, and left and right ends of the rectangular grid segment extend out of the positive electrode busbar to form extended grid segments, each of the extended grid segments is a rectangular extensional break-proof grid segment, both ends of each isosceles trapezoidal grid segment are respectively in contact with the extensional break-proof grid segment and the positive electrode grid, each isosceles trapezoidal grid segment is a tapered grid segment with a cross section gradually reducing in a direction from the positive electrode busbar to the positive electrode grid, and the at least one hollow-out groove is located only within the isosceles trapezoidal grid segment.