CPC H01L 29/7869 (2013.01) [H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01)] | 13 Claims |
1. A semiconductor device comprising a transistor comprising:
a first metal oxide layer over a gate electrode;
a second metal oxide layer on the first metal oxide layer;
a third metal oxide layer over a first region of the second metal oxide layer;
a fourth metal oxide layer over a second region of the second metal oxide layer; and
a conductive layer electrically connected to the third metal oxide layer,
wherein a conductivity of the first metal oxide layer is higher than a conductivity of the second metal oxide layer,
wherein each of a conductivity of the third metal oxide layer and a conductivity of the fourth metal oxide layer is higher than the conductivity of the second metal oxide layer, and
wherein the second metal oxide layer comprises indium, zinc, and gallium.
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