US 11,817,502 B2
Three-dimensional field effect device
Huimei Zhou, Albany, NY (US); Su Chen Fan, Cohoes, NY (US); Shogo Mochizuki, Mechanicville, NY (US); Peng Xu, Santa Clara, CA (US); and Nicolas J. Loubet, Guilderland, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jan. 5, 2022, as Appl. No. 17/569,133.
Application 17/569,133 is a division of application No. 16/592,455, filed on Oct. 3, 2019, granted, now 11,222,981.
Application 16/592,455 is a division of application No. 15/979,589, filed on May 15, 2018, granted, now 10,490,667, issued on Nov. 26, 2019.
Prior Publication US 2022/0130992 A1, Apr. 28, 2022
Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 27/06 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 27/0688 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A stacked device circuit, comprising:
a first semiconductor layer section on a substrate;
a dielectric fill on the substrate adjoining the first semiconductor layer section;
a second semiconductor layer section on the first semiconductor layer section;
a lower gate structure on the dielectric fill and adjoining the second semiconductor layer section;
a third semiconductor layer section on the second semiconductor layer section; and
an insulating layer on the third semiconductor layer section and lower gate structure.