US 11,817,497 B2
Vertical field effect transistor inverter with single fin device
Junli Wang, Slingerlands, NY (US); Ruilong Xie, Niskayuna, NY (US); Alexander Reznicek, Troy, NY (US); and Chen Zhang, Guilderland, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 25, 2021, as Appl. No. 17/445,832.
Prior Publication US 2023/0073990 A1, Mar. 9, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7827 (2013.01) [H01L 29/063 (2013.01); H01L 29/66666 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A vertical field-effect transistor (VTFET) inverter, comprising:
a p-channel field-effect transistor (P-FET) comprising a P-FET top source/drain (S/D) and a P-FET bottom S/D;
an n-channel field-effect transistor (N-FET) comprising an N-FET top S/D and a N-FET bottom S/D;
a buried contact located at a boundary between the P-FET bottom S/D and the N-FET bottom S/D, wherein an entire top surface of the buried contact is below a top surface of the P-FET bottom S/D and a top surface of the N-FET bottom S/D; and
a Vout contact electrically connected to one of the P-FET bottom source/drain and the N-FET bottom S/D.