CPC H01L 29/1033 (2013.01) [H01L 27/092 (2013.01); H01L 29/42356 (2013.01); H01L 29/7802 (2013.01); H01L 21/823412 (2013.01); H01L 21/823807 (2013.01); H01L 21/823885 (2013.01)] | 39 Claims |
1. A semiconductor device comprising a first device and a second device opposite to each other on a substrate, the first device and the second device each comprising:
a channel portion extending vertically on the substrate and having a U-shape in a plan view;
source/drain portions respectively located at upper and lower ends of the channel portion and along the U-shaped channel portion; and
a gate stack overlapping the channel portion on an inner side of the U-shape,
wherein an opening of the U-shape of the first device and an opening of the U-shape of the second device are opposite to each other,
wherein at least a portion of the gate stack of the first device close to the channel portion and at least a portion of the gate stack of the second device close to the channel portion are substantially coplanar, and
wherein the source/drain portions of each of the first device and the second device protrudes toward an inner side of the U-shape with respect to the channel portion, such that the source/drain portions and the channel portion are of C-shape in a sectional view.
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