US 11,817,480 B2
Semiconductor device with u-shaped channel and electronic apparatus including the same
Huilong Zhu, Poughkeepsie, NY (US)
Assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Filed by INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Filed on Dec. 4, 2020, as Appl. No. 17/112,343.
Claims priority of application No. 201911254752.X (CN), filed on Dec. 6, 2019.
Prior Publication US 2021/0175332 A1, Jun. 10, 2021
Int. Cl. H01L 29/06 (2006.01); H01L 29/41 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01)
CPC H01L 29/1033 (2013.01) [H01L 27/092 (2013.01); H01L 29/42356 (2013.01); H01L 29/7802 (2013.01); H01L 21/823412 (2013.01); H01L 21/823807 (2013.01); H01L 21/823885 (2013.01)] 39 Claims
OG exemplary drawing
 
1. A semiconductor device comprising a first device and a second device opposite to each other on a substrate, the first device and the second device each comprising:
a channel portion extending vertically on the substrate and having a U-shape in a plan view;
source/drain portions respectively located at upper and lower ends of the channel portion and along the U-shaped channel portion; and
a gate stack overlapping the channel portion on an inner side of the U-shape,
wherein an opening of the U-shape of the first device and an opening of the U-shape of the second device are opposite to each other,
wherein at least a portion of the gate stack of the first device close to the channel portion and at least a portion of the gate stack of the second device close to the channel portion are substantially coplanar, and
wherein the source/drain portions of each of the first device and the second device protrudes toward an inner side of the U-shape with respect to the channel portion, such that the source/drain portions and the channel portion are of C-shape in a sectional view.