CPC H01L 21/28506 (2013.01) [C23C 16/0272 (2013.01); C23C 16/06 (2013.01); C23C 16/402 (2013.01); C23C 16/505 (2013.01); C23C 28/322 (2013.01); C23C 28/34 (2013.01); C23C 28/345 (2013.01); C23C 28/42 (2013.01); H01L 21/0245 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 21/02315 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02697 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/32051 (2013.01); H01L 21/76876 (2013.01); H10B 43/27 (2023.02)] | 20 Claims |
1. A method, comprising:
placing a substrate into a processing chamber;
forming a metal layer on a seed layer formed on the substrate, comprising:
increasing a temperature of the substrate to a processing temperature;
flowing a metal-containing precursor and nitrogen gas into the processing chamber, wherein a ratio of a flow rate of the metal-containing precursor to a flow rate of the nitrogen gas ranges from 10:1 to 1:2; and
forming a plasma inside of the processing chamber by igniting the metal-containing precursor and the nitrogen gas with a high frequency radio frequency power and a low frequency radio frequency power; and
forming an oxide layer on a surface of the metal layer disposed on the substrate, forming the oxide layer comprising:
flowing an oxygen-free precursor into the processing chamber, the oxygen-free precursor being excited by a plasma to form an oxygen-free species;
flowing an oxygen-containing gas into the processing chamber subsequent to forming the oxygen-free species while continuing to flow the oxygen-free precursor into the processing chamber, the oxygen-containing gas being excited by the plasma to form an oxygen species; and
bonding the oxygen-free species to the oxygen species during forming of the oxygen species.
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