CPC H01L 21/0332 (2013.01) [G03F 1/46 (2013.01); H01L 21/0271 (2013.01)] | 37 Claims |
1. A method of forming a structure, said method comprising:
providing a substrate comprising a surface comprising topographic features, said substrate optionally including one or more intermediate layers on said substrate surface;
applying a composition to said substrate surface, or on said one or more intermediate layers, if present, so as to form a planarizing layer, said composition comprising a polymer comprising [3-(triethoxysilyl)propyl]succinic anhydride monomers; and
performing (I), (II), (III), (IV), or (V):
(I) forming a silicon hardmask layer on said planarizing layer;
optionally forming an antireflective layer on said silicon hardmask layer; and
forming a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present;
(II) forming a silicon hardmask layer on said planarizing layer;
forming a carbon-rich layer on said silicon hardmask layer;
optionally forming an antireflective layer on said carbon-rich layer; and
forming a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(III) forming a carbon-rich layer on said planarizing layer;
optionally forming an antireflective layer on said carbon-rich layer; and
forming a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(IV) forming a carbon-rich layer on said planarizing layer;
forming a silicon hardmask layer on said carbon-rich layer;
optionally forming an antireflective layer on said silicon hardmask layer; and
forming a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present; or
(V) forming an antireflective layer on said planarizing layer; and
forming a photoresist layer on said antireflective layer.
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15. A structure comprising:
a substrate comprising a surface comprising topographic features, said substrate optionally including one or more intermediate layers on said substrate surface;
a planarizing layer on said substrate surface or on said one or more intermediate layers, if present, said planarizing layer comprising a polymer comprising [3-(triethoxysilyl)propyl]succinic anhydride monomers; and
one of (I), (II), (III), (IV), or (V):
(I) a silicon hardmask layer on said planarizing layer;
optionally an antireflective layer on said silicon hardmask layer; and
a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present;
(II) a silicon hardmask layer on said planarizing layer;
a carbon-rich layer on said silicon hardmask layer;
optionally an antireflective layer on said carbon-rich layer; and
a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(III) a carbon-rich layer on said planarizing layer;
optionally an antireflective layer on said carbon-rich layer; and
a photoresist layer on said carbon-rich layer, or on said antireflective layer, if present;
(IV) a carbon-rich layer on said planarizing layer;
a silicon hardmask layer on said carbon-rich layer;
optionally an antireflective layer on said silicon hardmask layer; and
a photoresist layer on said silicon hardmask layer, or on said antireflective layer, if present; or
(V) an antireflective layer on said planarizing layer; and
a photoresist layer on said antireflective layer.
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