US 11,817,172 B2
Table management method, memory storage device and memory control circuit unit
Chih-Ling Wang, Anhui (CN); Qi-Ao Zhu, Anhui (CN); Jing Zhang, Anhui (CN); and Yang Zhang, Anhui (CN)
Assigned to Hefei Core Storage Electronic Limited, Anhui (CN)
Filed by Hefei Core Storage Electronic Limited, Anhui (CN)
Filed on Apr. 29, 2022, as Appl. No. 17/732,532.
Claims priority of application No. 202210361467.3 (CN), filed on Apr. 7, 2022.
Prior Publication US 2023/0326502 A1, Oct. 12, 2023
Int. Cl. G11C 7/20 (2006.01); G11C 7/10 (2006.01); G11C 7/04 (2006.01)
CPC G11C 7/20 (2013.01) [G11C 7/04 (2013.01); G11C 7/1039 (2013.01); G11C 7/1069 (2013.01); G11C 7/1096 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A table management method for a memory storage device, wherein the memory storage device comprises a rewritable non-volatile memory module, and the table management method comprises:
storing a plurality of table groups, wherein each of the table groups in the plurality of table groups comprises a plurality of voltage management tables;
detecting a status of the memory storage device, wherein the status comprises a working status of the memory storage device, and the working status reflects whether the memory storage device is performing a booting procedure;
determining one of the table groups as a target table group according to the status of the memory storage device, wherein the target table group comprises a plurality of target voltage management tables; and
reading data from the rewritable non-volatile memory module using at least one read voltage level according to at least one of the target voltage management tables.