CPC G01S 13/08 (2013.01) [G06K 7/10366 (2013.01); G06K 19/0708 (2013.01); G06K 19/0723 (2013.01); H01P 1/38 (2013.01); H01S 1/00 (2013.01); H01S 5/042 (2013.01); H01S 5/5009 (2013.01); H01S 5/5018 (2013.01); H01S 5/5036 (2013.01); H03F 1/56 (2013.01); H03F 3/19 (2013.01); H03H 7/38 (2013.01); H03F 2200/222 (2013.01)] | 22 Claims |
1. A semiconductor maser, comprising:
a first matching network comprising an input end and an output end;
a second matching network comprising an input end and an output end;
a heterojunction-containing transistor comprising a drain, a source, and a gate; and
a resonant network;
wherein:
the output end of the first matching network is connected to the drain;
the input end of the second matching network is connected to the source;
the gate is connected to the resonant network; and
when in use, pumped microwaves are fed into the input end of the first matching network.
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