US 11,815,588 B2
Room-temperature semiconductor maser and applications thereof
Shirong Bu, Chengdu (CN); Liu Chen, Chengdu (CN); Cheng Zeng, Chengdu (CN); Junsong Ning, Chengdu (CN); Zhanping Wang, Chengdu (CN); Yang Fu, Chengdu (CN); Ruyi Wang, Chengdu (CN); and Chenle Wang, Chengdu (CN)
Assigned to UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu (CN)
Filed by University of Electronic Science and Technology of China, Chengdu (CN)
Filed on Jul. 6, 2020, as Appl. No. 16/920,781.
Claims priority of application No. 201910604006.2 (CN), filed on Jul. 5, 2019; application No. 201910604008.1 (CN), filed on Jul. 5, 2019; application No. 201910604297.5 (CN), filed on Jul. 5, 2019; application No. 201910604857.7 (CN), filed on Jul. 5, 2019; and application No. 201910605598.X (CN), filed on Jul. 5, 2019.
Prior Publication US 2021/0003688 A1, Jan. 7, 2021
Int. Cl. G01S 13/08 (2006.01); H03H 7/38 (2006.01); H01S 1/00 (2006.01); H01S 5/042 (2006.01); H03F 3/19 (2006.01); H03F 1/56 (2006.01); G06K 19/07 (2006.01); G06K 7/10 (2006.01); H01P 1/38 (2006.01); H01S 5/50 (2006.01)
CPC G01S 13/08 (2013.01) [G06K 7/10366 (2013.01); G06K 19/0708 (2013.01); G06K 19/0723 (2013.01); H01P 1/38 (2013.01); H01S 1/00 (2013.01); H01S 5/042 (2013.01); H01S 5/5009 (2013.01); H01S 5/5018 (2013.01); H01S 5/5036 (2013.01); H03F 1/56 (2013.01); H03F 3/19 (2013.01); H03H 7/38 (2013.01); H03F 2200/222 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor maser, comprising:
a first matching network comprising an input end and an output end;
a second matching network comprising an input end and an output end;
a heterojunction-containing transistor comprising a drain, a source, and a gate; and
a resonant network;
wherein:
the output end of the first matching network is connected to the drain;
the input end of the second matching network is connected to the source;
the gate is connected to the resonant network; and
when in use, pumped microwaves are fed into the input end of the first matching network.