CPC C23C 16/45565 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32633 (2013.01); H01L 21/32136 (2013.01)] | 17 Claims |
1. A semiconductor processing chamber comprising:
a gasbox;
a substrate support;
a blocker plate positioned between the gasbox and the substrate support, wherein the blocker plate defines a plurality of blocker plate apertures through the blocker plate; and
a faceplate positioned between the blocker plate and the substrate support, wherein the faceplate is characterized by a first surface facing the blocker plate and a second surface opposite the first surface, wherein the second surface of the faceplate and the substrate support at least partially define a processing region within the semiconductor processing chamber, wherein the faceplate is characterized by a central axis, wherein the faceplate defines a plurality of faceplate apertures through the faceplate, wherein the faceplate defines a central recess about the central axis extending from the second surface of the faceplate to a depth less than a thickness of the faceplate, and
wherein the central recess defines a blind hole, and
wherein each faceplate aperture comprises an aperture profile characterized by a first section extending from the first surface to a position partially through the faceplate, and further characterized by a second section extending from the position partially through the faceplate to the second surface, wherein the central recess is characterized by a substantially identical profile as the second section of the aperture profile of each faceplate aperture.
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