US 11,812,674 B2
Systems and methods for phase change material based thermal assessment
Chien-Mao Chen, Zhubei (TW); and Hung-Jen Hsu, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 1, 2021, as Appl. No. 17/336,217.
Application 17/336,217 is a continuation of application No. 16/373,379, filed on Apr. 2, 2019, granted, now 11,031,556.
Claims priority of application No. 201811489868.7 (CN), filed on Dec. 6, 2018.
Prior Publication US 2021/0288254 A1, Sep. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H10N 70/20 (2023.01)
CPC H10N 70/041 (2023.02) [H01L 21/67248 (2013.01); H01L 22/14 (2013.01); H10N 70/023 (2023.02); H10N 70/231 (2023.02); H10N 70/8828 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
growing a phase change material on a platform configured for a semiconductor workpiece process;
setting the phase change material to an amorphous state;
performing the semiconductor workpiece process within a semiconductor processing chamber, wherein the semiconductor workpiece process comprises at least one of: rapid thermal processing (RTP), physical vapor deposition (PVD) or dynamic surface annealing (DSA); and
measuring a resistance across two points along the phase change material, wherein the resistance is measured across the two points while performing the semiconductor workpiece process.