US 11,812,664 B2
Pizoelectric MEMS device with electrodes having low surface roughness
Yi-Ren Wang, New Taipei (TW); Hung-Hua Lin, Taipei (TW); and Yuan-Chih Hsieh, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 13, 2021, as Appl. No. 17/319,628.
Application 17/319,628 is a division of application No. 16/371,421, filed on Apr. 1, 2019, granted, now 11,050,012.
Prior Publication US 2021/0265557 A1, Aug. 26, 2021
Int. Cl. H01L 41/29 (2013.01); H10N 30/06 (2023.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01); H10N 30/87 (2023.01)
CPC H10N 30/06 (2023.02) [B81B 3/0021 (2013.01); B81C 1/00166 (2013.01); B81C 1/00349 (2013.01); H10N 30/87 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A piezomicroelectromechanical system (piezoMEMS) device, comprising:
a first electrode layer arranged over a first piezoelectric layer;
a second piezoelectric layer arranged over the first electrode layer;
a second electrode layer arranged over the second piezoelectric layer;
a third piezoelectric layer arranged over the second electrode layer;
a first contact arranged over and extending through the second electrode layer and the second piezoelectric layer to contact the first electrode layer;
a dielectric liner layer arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer; and
a second contact arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact;
wherein a topmost surface of the dielectric liner layer is level with a top surface of the third piezoelectric layer, wherein the first contact comprises a horizontal extending portion overlying the dielectric liner layer and the third piezoelectric layer, and wherein the horizontal extending portion has a bottom surface facing and spaced from the topmost surface of the dielectric liner layer.