CPC H10B 43/35 (2023.02) [H01L 21/0337 (2013.01); H01L 29/0649 (2013.01); H01L 29/40117 (2019.08); H01L 29/42352 (2013.01); H10B 43/50 (2023.02)] | 20 Claims |
1. An integrated circuit (IC) comprising:
a plurality of logic devices disposed on a logic region of a substrate, including a first logic device configured to operate at a first voltage and comprising a first logic gate electrode separated from the substrate by a first logic gate dielectric, the first logic gate dielectric being disposed along sidewall and bottom surfaces of a logic device trench of the substrate, and the first logic gate electrode being disposed conformally along the first logic gate dielectric within the logic device trench; and
a hard mask layer disposed on the first logic gate electrode within the logic device trench,
wherein the hard mask layer has a top surface coplanar with that of the first logic gate electrode.
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