CPC H03B 7/08 (2013.01) [H01L 23/14 (2013.01); H01L 23/28 (2013.01); H01L 23/3135 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/5389 (2013.01); H01L 23/66 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/97 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01P 1/2005 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/13111 (2013.01); H03B 2200/0084 (2013.01)] | 18 Claims |
1. A terahertz device comprising:
a first resin layer having a first resin layer obverse face and a first resin layer reverse face that are spaced apart from each other in a first direction;
a first conductor having a first conductor obverse face and a first conductor reverse face, the first conductor extending within the first resin layer in the first direction;
a first wiring layer extending on the first resin layer obverse face and the first conductor obverse face;
a terahertz element having an element obverse face and an element reverse face;
a second resin layer having a second resin layer obverse face and a second resin layer reverse face that faces the first resin layer obverse face, the second resin layer covering at least the terahertz element; and
an external electrode electrically connected to first conductor reverse face,
wherein the terahertz element is electrically connected to the first wiring layer,
wherein the element reverse face is an active surface that emits or receives a terahertz wave, and
wherein a second conductor surrounds the terahertz element as viewed in the first direction.
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