CPC H01L 33/06 (2013.01) [H01L 33/025 (2013.01); H01L 33/325 (2013.01); H04B 10/25 (2013.01); H04B 10/615 (2013.01)] | 10 Claims |
1. An LED comprising:
a p type GaN layer;
an n type GaN layer; and
a plurality of alternating quantum well layers and barrier layers between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with the barrier layers being p-doped with Mg having a doping concentration of at least 1019/cm3, but only in a central portion of each barrier layer.
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