US 11,810,981 B2
Semiconductor structure having both gate-all-around devices and planar devices
Jhon Jhy Liaw, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Feb. 6, 2023, as Appl. No. 18/164,769.
Application 17/222,011 is a division of application No. 16/393,166, filed on Apr. 24, 2019, granted, now 10,971,630, issued on Apr. 6, 2021.
Application 18/164,769 is a continuation of application No. 17/222,011, filed on Apr. 5, 2021, granted, now 11,575,050.
Prior Publication US 2023/0187561 A1, Jun. 15, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/775 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a substrate;
first and second n-type wells and a p-type well over the substrate, wherein the first and the second n-type wells sandwich the p-type well from a top view;
a first row of cells over the p-type well and the first n-type well from a top view, wherein the first row of cells include gate-all-around (GAA) nanosheet (NS) cells mixed with GAA nanowire (NW) cells; and
a second row of cells over the p-type well and the second n-type well from a top view, wherein the second row of cells include GAA NS cells mixed with GAA NW cells, wherein each GAA NS cell includes an NMOS GAA NS transistor and a PMOS GAA NS transistor, each GAA NW cell includes an NMOS GAA NW transistor and a PMOS GAA NW transistor,
wherein in a cross-sectional view, each of the GAA NS and NW transistors includes vertically stacked multiple first channels, a first gate dielectric layer wrapping around the first channels, and a first gate electrode wrapping around the first gate dielectric layer, wherein the first channels of the GAA NS transistors are wider than the first channels of the GAA NW transistors.