CPC H01L 29/785 (2013.01) [H01L 21/28556 (2013.01); H01L 21/32134 (2013.01); H01L 29/401 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01)] | 20 Claims |
1. A fin field-effect transistor (finFET) device, comprising:
a substrate;
a fin over the substrate; and
a gate structure over the fin and having a first top surface, the gate structure comprising:
a work-function metal (WFM) layer over an inner sidewall of the gate structure and having a second top surface lower than the first top surface;
a filler gate metal layer over the second top surface of the WFM layer and having a third top surface substantially co-planar with the first top surface; and
a self-assembled monolayer (SAM) in physical contact with the filler gate metal layer and the WFM layer.
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