CPC H01L 29/66742 (2013.01) [H01L 21/0259 (2013.01); H01L 21/02236 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] | 8 Claims |
1. A method for manufacturing a fin semiconductor device, comprising steps of:
providing a substrate, wherein a fin channel base is patterned on and in contact with the substrate;
epitaxially growing a top part of the fin channel base and extending the top part of the fin channel base sideways and upward to form a fin channel core;
forming a first barrier layer at two sides of the fin channel base on the substrate, wherein a top surface of the first barrier layer is lower than a top surface of the fin channel base;
forming a second barrier layer on the first barrier layer, wherein a top surface of the second barrier layer is above the top surface of the fin channel base, wherein a gap is provided between the second barrier layer and each side of the fin channel base;
performing, on the first barrier layer, the epitaxial growth of the top part of the fin channel base in the gap by using the second barrier layer as side walls, to extend the top part of the fin channel base sideways and upward;
oxidizing the fin channel base to form a fin channel structure, wherein the fin channel structure comprises the fin channel core surrounded with an oxide layer at the top part of the fin channel base and an intermediate part of the fin channel base under the top part; and
removing the oxide layer to expose the fin channel core, wherein the fin channel core suspends over the substrate.
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