US 11,810,961 B2
Transistor gate structures and methods of forming the same
Hsin-Yi Lee, Hsinchu (TW); Weng Chang, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 1, 2021, as Appl. No. 17/220,076.
Claims priority of provisional application 63/142,549, filed on Jan. 28, 2021.
Prior Publication US 2022/0238687 A1, Jul. 28, 2022
Int. Cl. H01L 29/49 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/4908 (2013.01) [H01L 21/02603 (2013.01); H01L 21/28088 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823842 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first nanostructure;
a second nanostructure;
a gate dielectric layer wrapped around the first nanostructure and the second nanostructure;
a tungsten-free work function tuning layer wrapped around the gate dielectric layer;
a tungsten-containing work function tuning layer wrapped around the tungsten-free work function tuning layer, an area between the first nanostructure and the second nanostructure being completely filled by respective portions of the tungsten-containing work function tuning layer, the tungsten-free work function tuning layer, and the gate dielectric layer, a first material of the tungsten-containing work function tuning layer having a lower resistivity than a second material of the tungsten-free work function tuning layer; and
a fill layer on the tungsten-containing work function tuning layer.