US 11,810,939 B2
Method of forming backside illuminated image sensor device with shielding layer
Volume Chien, Tainan (TW); Su-Hua Chang, Chiayi County (TW); Chia-Yu Wei, Tainan (TW); Zen-Fong Huang, Tainan (TW); and Chi-Cherng Jeng, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on May 13, 2022, as Appl. No. 17/744,175.
Application 17/744,175 is a division of application No. 14/073,580, filed on Nov. 6, 2013, granted, now 11,335,721.
Prior Publication US 2022/0271071 A1, Aug. 25, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 31/0216 (2014.01)
CPC H01L 27/1464 (2013.01) [H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14687 (2013.01); H01L 31/02164 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a backside illuminated image sensor device, the method comprising:
forming a dielectric layer on a back surface of a semiconductor substrate, wherein the semiconductor substrate has an pixel array formed on a front surface of the semiconductor substrate;
patterning the dielectric layer to form a plurality of scribe lines surrounding the pixel array;
forming a conductive shielding layer on the dielectric layer;
patterning the conductive shielding layer to expose the scribe lines;
forming a dielectric buffer layer on the patterned conductive shielding layer and the dielectric layer;
forming a color filter layer on the dielectric buffer layer; and
forming a microlens layer on the color filter layer.