US 11,810,933 B2
Image sensor device and fabrication method thereof
Feng-Chien Hsieh, Pingtung (TW); Yun-Wei Cheng, Taipei (TW); Wei-Li Hu, Tainan (TW); Kuo-Cheng Lee, Tainan (TW); and Ying-Hao Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Sep. 2, 2020, as Appl. No. 17/010,717.
Claims priority of provisional application 62/963,913, filed on Jan. 21, 2020.
Prior Publication US 2021/0225916 A1, Jul. 22, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14683 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating an image sensor device, comprising:
forming a plurality of photosensitive pixels in a substrate and a plurality of reference photosensitive pixels around the photosensitive pixels;
depositing a dielectric layer over the substrate;
etching the dielectric layer, resulting in a first trench in the dielectric layer and laterally surrounding the photosensitive pixels; and
forming a light blocking structure in the first trench, such that the light blocking structure laterally surrounds the photosensitive pixels, and such that a bottommost surface of the light blocking structure is in contact with the substrate and overlaps the reference photosensitive pixels from a top view.