US 11,810,927 B2
Solid-state imaging apparatus including semiconductor element with photoelectric converter and strain sensors
Kiyokazu Itoi, Osaka (JP); and Daisuke Sakurai, Osaka (JP)
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka (JP)
Filed by Panasonic Intellectual Property Management Co., Ltd., Osaka (JP)
Filed on Feb. 9, 2021, as Appl. No. 17/171,917.
Claims priority of application No. 2020-052672 (JP), filed on Mar. 24, 2020.
Prior Publication US 2021/0305293 A1, Sep. 30, 2021
Int. Cl. H01L 27/146 (2006.01); G01L 1/18 (2006.01)
CPC H01L 27/14603 (2013.01) [G01L 1/18 (2013.01); H01L 27/14618 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor element comprising:
a plurality of microlenses provided on an upper surface of a main layer to collect light;
a plurality of conductive electrodes provided on a lower surface of the main layer;
at least one photoelectric converter to which the light collected by the plurality of microlenses is guided provided in the main layer;
a strain sensor electrically connected to the plurality of conductive electrodes via internal wiring and provided in the main layer with the photoelectric converter, the strain sensor being configured to detect a strain using a piezoresistive effect in which electrical resistance changes when a mechanical stress is applied; and
a color filter provided in the main layer and between the plurality of microlenses and the photoelectric converter to filter the light collected by the plurality of microlenses.