US 11,810,919 B2
Semiconductor device structure with conductive via structure and method for forming the same
Jyun-De Wu, New Taipei (TW); Te-Chih Hsiung, Taipei (TW); Yi-Chun Chang, Hsinchu (TW); Yi-Chen Wang, Zhubei (TW); Yuan-Tien Tu, Chiayi County (TW); Peng Wang, Hsinchu (TW); and Huan-Just Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 17, 2021, as Appl. No. 17/350,171.
Prior Publication US 2022/0406777 A1, Dec. 22, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01)
CPC H01L 27/0924 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate having a first fin structure;
a first source/drain structure over the first fin structure;
a first dielectric layer over the first source/drain structure and the substrate;
a first conductive contact structure in the first dielectric layer and over the first source/drain structure, and the first conductive contact structure has a substantially strip shape in a top view of the first conductive contact structure;
a second dielectric layer over the first dielectric layer and the first conductive contact structure;
a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure, wherein the first conductive via structure has a first substantially strip shape in a top view of the first conductive via structure; and
a first conductive line over the first conductive via structure and the second dielectric layer, wherein the first conductive line is electrically connected to the first source/drain structure through the first conductive contact structure and the first conductive via structure.