US 11,810,912 B2
Semiconductor devices having asymmetric integrated gate resistors for balanced turn-on/turn-off behavior
In-Hwan Ji, Cary, NC (US); Jae-Hyung Park, Apex, NC (US); and Edward Van Brunt, Cary, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Jul. 22, 2021, as Appl. No. 17/382,407.
Prior Publication US 2023/0026868 A1, Jan. 26, 2023
Int. Cl. H01L 27/06 (2006.01); H01L 29/423 (2006.01)
CPC H01L 27/0629 (2013.01) [H01L 29/4238 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate pad;
a plurality of gate fingers;
a first gate resistor circuit for a gate current flowing from the gate pad to the plurality of gate fingers, wherein the first gate resistor circuit comprises a first gate resistor and a first switch coupled between the gate pad and the plurality of gate fingers; and
a second gate resistor circuit for a gate current flowing from the plurality of gate fingers to the gate pad, wherein the second gate resistor circuit comprises a second gate resistor and a second switch coupled between the gate pad and the plurality of gate fingers,
wherein a first total gate resistance value of the first gate resistor circuit is different than a second total gate resistance value of the second gate resistor circuit.