CPC H01L 27/0629 (2013.01) [H01L 29/4238 (2013.01)] | 24 Claims |
1. A semiconductor device, comprising:
a gate pad;
a plurality of gate fingers;
a first gate resistor circuit for a gate current flowing from the gate pad to the plurality of gate fingers, wherein the first gate resistor circuit comprises a first gate resistor and a first switch coupled between the gate pad and the plurality of gate fingers; and
a second gate resistor circuit for a gate current flowing from the plurality of gate fingers to the gate pad, wherein the second gate resistor circuit comprises a second gate resistor and a second switch coupled between the gate pad and the plurality of gate fingers,
wherein a first total gate resistance value of the first gate resistor circuit is different than a second total gate resistance value of the second gate resistor circuit.
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