CPC H01L 25/167 (2013.01) [H01L 31/02021 (2013.01); H01L 31/022425 (2013.01); H01L 31/04 (2013.01); H01L 31/18 (2013.01)] | 16 Claims |
1. A method comprising:
forming a via through a transparent carrier wafer;
forming a conductive layer within the via;
bonding a solid state lighting (SSL) package to a first side of the carrier wafer;
bonding a photovoltaic (PV) wafer to a second side of the carrier wafer opposite to the first side, wherein the photovoltaic wafer comprises an active area and a conductive area located outside of the active area, the conductive area being in electrical contact with the conductive layer;
forming an SSL contact over the solid state lighting package on the first side of the carrier wafer; and
forming a PV contact over the conductive layer on the first side of the carrier wafer.
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