US 11,810,885 B2
Semiconductor element bonding structure, method for producing semiconductor element bonding structure, and electrically conductive bonding agent
Kohei Tatsumi, Tokyo (JP); and Yasunori Tanaka, Tokyo (JP)
Assigned to WASEDA UNIVERSITY, Tokyo (JP)
Filed by WASEDA UNIVERSITY, Tokyo (JP)
Filed on Feb. 26, 2021, as Appl. No. 17/187,452.
Application 17/187,452 is a continuation of application No. PCT/JP2019/032599, filed on Aug. 21, 2019.
Claims priority of application No. 2018-163838 (JP), filed on Aug. 31, 2018.
Prior Publication US 2021/0225794 A1, Jul. 22, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/495 (2006.01)
CPC H01L 24/29 (2013.01) [H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/27464 (2013.01); H01L 2224/29247 (2013.01); H01L 2224/29255 (2013.01); H01L 2224/29324 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83091 (2013.01); H01L 2224/83099 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83395 (2013.01); H01L 2224/83455 (2013.01); H01L 2224/83951 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/15738 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/3512 (2013.01)] 9 Claims
OG exemplary drawing
 
6. An electrically conductive bonding agent comprising:
a mixture of nickel (Ni) particles containing nano-sized nickel (Ni) and metal particles having a hardness lower than that of nickel (Ni) and having a particle diameter of micro size,
wherein a volume ratio of the metal particles ranges from 50% to 90% of a total volume of the metal particles and the nickel (Ni) particles.