US 11,810,843 B2
Integrated capacitor with extended head bump bond pillar
Sreenivasan K. Koduri, Allen, TX (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Aug. 17, 2021, as Appl. No. 17/404,970.
Application 17/404,970 is a continuation of application No. 16/588,138, filed on Sep. 30, 2019, granted, now 11,094,620.
Prior Publication US 2021/0375731 A1, Dec. 2, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/288 (2006.01); H01L 21/56 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/49589 (2013.01) [H01L 21/288 (2013.01); H01L 21/4825 (2013.01); H01L 21/56 (2013.01); H01L 24/05 (2013.01); H01L 28/60 (2013.01)] 36 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a die having a connection surface;
a first pillar coupled to the connection surface;
a second pillar coupled to the connection surface;
a first extended head electrically coupled to the first pillar, the first extended head extending past the first pillar in a direction parallel to the connection surface;
a second extended head electrically coupled to the second pillar, the second extended head extending past the second pillar in a direction parallel to the connection surface, wherein:
the first extended head provides a solder bump pad; and
the second extended head provides at least a portion of a first plate of an integrated capacitor of the microelectronic device; and
a second plate of the integrated capacitor, wherein a dielectric layer of the integrated capacitor includes a portion that extends from between the first and second plates to beyond a footprint of the second plate.