CPC H01L 21/823814 (2013.01) [H01L 21/28518 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 21/266 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/32135 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a first silicide over a first source/drain region over a fin, the first silicide comprising a first phase of a first material, the first material comprising a first set of elements; and
a second silicide over a second source/drain region, the second silicide comprising a first element; and
a third silicide over the second silicide, the third silicide comprising a second set of elements, the second set of elements comprising the first set of elements and the first element, the first element being insoluble in a second phase of the first material.
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