US 11,810,826 B2
Semiconductor devices with stacked silicide regions
Wei-Yip Loh, Hsinchu (TW); Yan-Ming Tsai, Toufen Township (TW); Hung-Hsu Chen, Tainan (TW); Chih-Wei Chang, Hsinchu (TW); and Sheng-Hsuan Lin, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 27, 2022, as Appl. No. 17/827,355.
Application 17/827,355 is a division of application No. 16/527,350, filed on Jul. 31, 2019, granted, now 11,348,839.
Prior Publication US 2022/0293474 A1, Sep. 15, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/266 (2006.01); H01L 29/78 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/28518 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 21/266 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/32135 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first silicide over a first source/drain region over a fin, the first silicide comprising a first phase of a first material, the first material comprising a first set of elements; and
a second silicide over a second source/drain region, the second silicide comprising a first element; and
a third silicide over the second silicide, the third silicide comprising a second set of elements, the second set of elements comprising the first set of elements and the first element, the first element being insoluble in a second phase of the first material.