CPC H01L 21/823814 (2013.01) [H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a first fin structure protruding from a semiconductor substrate;
a second fin structure protruding from the semiconductor substrate and adjacent to the first fin structure;
a p-type source/drain feature over the first fin structure;
an n-type source/drain feature over the second fin structure;
isolation features separating bottom portions of the p-type source/drain feature and the n-type source/drain feature; and
an interlayer dielectric (ILD) layer disposed over the p-type and the n-type source/drain features, wherein a portion of the ILD layer is disposed below a portion of the isolation features that is between the p-type and the n-type source/drain features.
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