US 11,810,824 B2
Semiconductor device and manufacturing method thereof
Chung-Ting Ko, Kaohsiung (TW); Sung-En Lin, Hsinchu County (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,608.
Prior Publication US 2023/0065708 A1, Mar. 2, 2023
Int. Cl. H01L 21/8234 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
9. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor fin over a substrate;
forming an isolation feature adjacent the semiconductor fin;
recessing the isolation feature to form a first recess;
forming a metal-containing compound mask in the first recess;
recessing the semiconductor fin to expose a sidewall of the metal-containing compound mask;
depositing a stress layer over the recessed the semiconductor fin and in contact with the sidewall of the metal-containing compound mask; and
annealing the metal-containing compound mask.