CPC H01L 21/76889 (2013.01) [H01L 21/28088 (2013.01); H01L 21/7684 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53209 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/4966 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01)] | 20 Claims |
1. An integrated circuit device comprising:
a substrate;
a gate electrode on the substrate;
a source/drain region extending into the substrate and spaced apart from the gate electrode;
a first gate contact plug over and contacting the gate electrode; and
a second gate contact plug over and contacting the first gate contact plug, wherein an upper width of the first gate contact plug is greater than a lower width of the second gate contact plug, and the second gate contact plug comprises cobalt or a metal silicide.
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