US 11,810,817 B2
In-situ CMP self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion
Zhen Yu Guan, Hsinchu (TW); and Hsun-Chung Kuang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Oct. 14, 2020, as Appl. No. 17/070,853.
Prior Publication US 2022/0115267 A1, Apr. 14, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76834 (2013.01) [H01L 21/02282 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 21/0206 (2013.01); H01L 21/02074 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a first dielectric layer on the substrate, the first dielectric layer comprising a contact structure embedded therein, the contact structure comprising a diffusion barrier including a first metal and a conductive line surrounded by the diffusion barrier and including a second metal different from the first metal;
a self-assembled monolayer on a top surface of the conductive line, but not on a top surface of the diffusion barrier; and
a second dielectric layer on the first dielectric layer and the contact structure,
wherein the self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer, the self-assembled monolayer derived from a self-assembly molecule having the following formula (I):
X-L-Q  (I)
wherein:
X is selenol, isocyanide, carboxylic acid, hydroxaminc acid, phosphonic acid, pyridine, dipyridine or terpyridine;
Q is chlorosilane or trichlorosilicon; and
L is alkylene.