US 11,810,811 B2
Buried metal for FinFET device and method
Lei-Chun Chou, Taipei (TW); Chih-Liang Chen, Hsinchu (TW); Jiann-Tyng Tzeng, Hsinchu (TW); Chih-Ming Lai, Hsinchu (TW); Ru-Gun Liu, Zhubei (TW); and Charles Chew-Yuen Young, Cupertino, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/869,142.
Application 17/116,443 is a division of application No. 16/191,338, filed on Nov. 14, 2018, granted, now 10,867,833, issued on Dec. 15, 2020.
Application 17/869,142 is a continuation of application No. 17/116,443, filed on Dec. 9, 2020, granted, now 11,424,154.
Claims priority of provisional application 62/592,499, filed on Nov. 30, 2017.
Prior Publication US 2022/0367240 A1, Nov. 17, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/74 (2006.01); H01L 23/535 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01)
CPC H01L 21/743 (2013.01) [H01L 23/535 (2013.01); H01L 29/66795 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 29/785 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a dividing fin protruding from a substrate;
a first buried line on a first side of the dividing fin;
a second buried line on a second side of the dividing fin;
a first gate structure over the first buried line, the first gate structure being electrically coupled to the first buried line;
a second gate structure over the second buried line, wherein a longitudinal axis of the first gate structure is aligned to a longitudinal axis of the second gate structure; and
a first dielectric layer between the second gate structure and the second buried line.